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TK31V60X,LQ

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TK31V60X,LQ

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.5V @ 1.5mA

Operating Temperature : 150°C (TJ)

Package / Case : 4-VSFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs : 65 nC @ 10 V

Rds On (Max) @ Id, Vgs : 98mOhm @ 9.4A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 600 V

Vgs (Max) : ±30V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 3000 pF @ 300 V

Mounting Type : Surface Mount

Series : DTMOSIV-H

Supplier Device Package : 4-DFN-EP (8x8)

Mfr : Toshiba Semiconductor and Storage

Current - Continuous Drain (Id) @ 25°C : 30.8A (Ta)

Power Dissipation (Max) : 240W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : TK31V60

Description : MOSFET N-CH 600V 30.8A 4DFN

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N-Channel 600 V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)

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