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IPB35N10S3L26ATMA1

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IPB35N10S3L26ATMA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.4V @ 39µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 39 nC @ 10 V

Rds On (Max) @ Id, Vgs : 26.3mOhm @ 35A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2700 pF @ 25 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101, OptiMOS™

Supplier Device Package : PG-TO263-3

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 35A (Tc)

Power Dissipation (Max) : 71W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPB35N10

Description : MOSFET N-CH 100V 35A D2PAK

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N-Channel 100 V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3

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