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NTH4L045N065SC1

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NTH4L045N065SC1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 105 nC @ 18 V

Product Status : Active

Mounting Type : Through Hole

Package : Tube

Input Capacitance (Ciss) (Max) @ Vds : 1870 pF @ 325 V

Series : -

Vgs (Max) : +22V, -8V

Vgs(th) (Max) @ Id : 4.3V @ 8mA

Supplier Device Package : TO-247-4L

Rds On (Max) @ Id, Vgs : 50mOhm @ 25A, 18V

Mfr : onsemi

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 15V, 18V

Power Dissipation (Max) : 187W (Tc)

Package / Case : TO-247-4

Drain to Source Voltage (Vdss) : 650 V

Current - Continuous Drain (Id) @ 25°C : 55A (Tc)

Technology : SiCFET (Silicon Carbide)

FET Feature : -

Description : SILICON CARBIDE MOSFET, NCHANNEL

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N-Channel 650 V 55A (Tc) 187W (Tc) Through Hole TO-247-4L

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