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IMZ120R350M1HXKSA1

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IMZ120R350M1HXKSA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 5.7V @ 1mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-4

Gate Charge (Qg) (Max) @ Vgs : 5.3 nC @ 18 V

Rds On (Max) @ Id, Vgs : 350mOhm @ 2A, 18V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 15V, 18V

Package : Tube

Drain to Source Voltage (Vdss) : 1200 V

Vgs (Max) : +23V, -7V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 182 pF @ 800 V

Mounting Type : Through Hole

Series : CoolSiC™

Supplier Device Package : PG-TO247-4-1

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 4.7A (Tc)

Power Dissipation (Max) : 60W (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : IMZ120

Description : SICFET N-CH 1.2KV 4.7A TO247-4

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N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1

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