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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs : 227 nC @ 10 V
Product Status : Active
Mounting Type : Through Hole
Package : Tube
Input Capacitance (Ciss) (Max) @ Vds : 10470 pF @ 50 V
Series : HEXFET®
Vgs (Max) : ±30V
Vgs(th) (Max) @ Id : 5V @ 250µA
Supplier Device Package : TO-247AC
Rds On (Max) @ Id, Vgs : 5.9mOhm @ 103A, 10V
Mfr : Infineon Technologies
Operating Temperature : -55°C ~ 175°C (TJ)
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Power Dissipation (Max) : 517W (Tc)
Package / Case : TO-247-3
Drain to Source Voltage (Vdss) : 150 V
Current - Continuous Drain (Id) @ 25°C : 171A (Tc)
Technology : MOSFET (Metal Oxide)
FET Feature : -
Description : TRENCH >=100V PG-TO247-3
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