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RS1E321GNTB1

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RS1E321GNTB1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 1mA

Operating Temperature : 150°C (TJ)

Package / Case : 8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs : 42.8 nC @ 10 V

Rds On (Max) @ Id, Vgs : 2.1mOhm @ 32A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 2850 pF @ 15 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : 8-HSOP

Mfr : Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C : 32A (Ta), 80A (Tc)

Power Dissipation (Max) : 3W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : RS1E

Description : MOSFET N-CH 30V 32A/80A 8HSOP

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N-Channel 30 V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP

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