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IXTH76P10T

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IXTH76P10T

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-247-3

Gate Charge (Qg) (Max) @ Vgs : 197 nC @ 10 V

Rds On (Max) @ Id, Vgs : 25mOhm @ 38A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±15V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 13700 pF @ 25 V

Mounting Type : Through Hole

Series : TrenchP™

Supplier Device Package : TO-247 (IXTH)

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 76A (Tc)

Power Dissipation (Max) : 298W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTH76

Description : MOSFET P-CH 100V 76A TO247

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P-Channel 100 V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

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