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IRFU5305PBF

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IRFU5305PBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs : 63 nC @ 10 V

Rds On (Max) @ Id, Vgs : 65mOhm @ 16A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 55 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1200 pF @ 25 V

Mounting Type : Through Hole

Series : HEXFET®

Supplier Device Package : IPAK (TO-251AA)

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 31A (Tc)

Power Dissipation (Max) : 110W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFU5305

Description : MOSFET P-CH 55V 31A IPAK

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P-Channel 55 V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

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