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SI8429DB-T1-E1

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SI8429DB-T1-E1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 800mV @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 4-XFBGA, CSPBGA

Gate Charge (Qg) (Max) @ Vgs : 26 nC @ 5 V

Rds On (Max) @ Id, Vgs : 35mOhm @ 1A, 4.5V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.2V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 8 V

Vgs (Max) : ±5V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1640 pF @ 4 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : 4-Microfoot

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 11.7A (Tc)

Power Dissipation (Max) : 2.77W (Ta), 6.25W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI8429

Description : MOSFET P-CH 8V 11.7A 4MICROFOOT

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P-Channel 8 V 11.7A (Tc) 2.77W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot

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