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RQ3C150BCTB

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RQ3C150BCTB

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1.2V @ 1mA

Operating Temperature : 150°C (TJ)

Package / Case : 8-PowerVDFN

Gate Charge (Qg) (Max) @ Vgs : 60 nC @ 4.5 V

Rds On (Max) @ Id, Vgs : 6.7mOhm @ 15A, 4.5V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : ±8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 4800 pF @ 10 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : 8-HSMT (3.2x3)

Mfr : Rohm Semiconductor

Current - Continuous Drain (Id) @ 25°C : 30A (Tc)

Power Dissipation (Max) : 20W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : RQ3C150

Description : MOSFET P-CHANNEL 20V 30A 8HSMT

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P-Channel 20 V 30A (Tc) 20W (Tc) Surface Mount 8-HSMT (3.2x3)

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