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Gate-Emitter Leakage Current : +/- 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 60 A
Pd - Power Dissipation : 200 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-220-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Manufacturer : STMicroelectronics
Description : IGBT Transistors N-Ch 600 Volt 30 Amp
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