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STGD5H60DF

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STGD5H60DF

Gate-Emitter Leakage Current : + / - 250 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 10 A

Pd - Power Dissipation : 83 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : DPAK-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 1.5 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed

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The STGD5H60DF,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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