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HGT1S20N60C3S9A

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RTD (Resistance Temperature Detector) [1016]
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HGT1S20N60C3S9A

Gate-Emitter Leakage Current : +/- 250 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 45 A

Pd - Power Dissipation : 164 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-263AB-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 1.4 V

Manufacturer : Fairchild Semiconductor

Description : IGBT Transistors 45a 600V N-Ch IGBT UFS Series

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The HGT1S20N60C3S9A,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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