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IXXR110N65B4H1

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IXXR110N65B4H1

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 150 A

Pd - Power Dissipation : 455 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : ISOPLUS 247-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 1.75 V

Manufacturer : IXYS

Description : IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT

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The IXXR110N65B4H1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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