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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 75 A
Pd - Power Dissipation : 540 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : PLUS 247-3
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.35 V
Manufacturer : IXYS
Description : IGBT Transistors 75Amps 600V
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