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VS-GP100TS60SFPBF

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VS-GP100TS60SFPBF

Gate-Emitter Leakage Current : +/- 500 nA

Product Category : IGBT Transistors

Mounting Style : Chassis

Continuous Collector Current at 25 C : 337 A

Pd - Power Dissipation : 781 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : INT-A-PAK

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : 20 V

Configuration : Dual

Collector-Emitter Saturation Voltage : -

Manufacturer : Vishay Semiconductors

Description : IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT

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The VS-GP100TS60SFPBF,from Vishay Semiconductors,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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