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NGTB35N65FL2WG

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NGTB35N65FL2WG

Gate-Emitter Leakage Current : 200 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 70 A

Pd - Power Dissipation : 300 W

Collector- Emitter Voltage VCEO Max : 650 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 175 C

Maximum Gate Emitter Voltage : 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 2.2 V

Manufacturer : onsemi

Description : IGBT Transistors 650V/35A FAST IGBT FSII T

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The NGTB35N65FL2WG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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