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NGTG12N60TF1G

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NGTG12N60TF1G

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 24 A

Pd - Power Dissipation : 54 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-3PF-3L

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 1.6 V

Manufacturer : onsemi

Description : IGBT Transistors 600V 12A IGBT TO-3PF

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The NGTG12N60TF1G,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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