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STGB6NC60HDT4

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RTD (Resistance Temperature Detector) [1016]
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STGB6NC60HDT4

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Pd - Power Dissipation : 80 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : D2PAK-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 2.7 V

Manufacturer : STMicroelectronics

Description : IGBT Transistors PowerMESH TM IGBT

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The STGB6NC60HDT4,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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