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Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Pd - Power Dissipation : 80 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : D2PAK-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Reel
Configuration : Single
Collector-Emitter Saturation Voltage : 2.7 V
Manufacturer : STMicroelectronics
Description : IGBT Transistors PowerMESH TM IGBT
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