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Gate-Emitter Leakage Current : 200 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 120 A
Pd - Power Dissipation : 298 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : 20 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.6 V
Manufacturer : onsemi
Description : IGBT Transistors 600V/60A IGBT LPT TO-247
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