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Beijing Silk Road Enterprise Management Services Co.,LTD
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STGP3NC120HD

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STGP3NC120HD

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Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Pd - Power Dissipation : 75 W

Collector-Emitter Saturation Voltage : 2.2 V

Package / Case : TO-220-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : 20 V

Packaging : Tube

Configuration : Single

Continuous Collector Current at 25 C : 14 A

Manufacturer : STMicroelectronics

Description : IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar

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The STGP3NC120HD,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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