Sign In | Join Free | My ccnmag.com |
|
Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 80 A
Pd - Power Dissipation : 349 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : TO-3PN
Packaging : Tube
Maximum Gate Emitter Voltage : 20 V
Collector-Emitter Saturation Voltage : 2.5 V
Manufacturer : Fairchild Semiconductor
Description : IGBT Transistors 650V, 40A Field Stop IGBT
![]() |
FGA40N65SMD Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.