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Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Transistors
Mounting Style : Screw
Continuous Collector Current at 25 C : 100 A
Pd - Power Dissipation : 625 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : IS4 (34 mm )-5
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Manufacturer : Infineon Technologies
Description : IGBT Transistors 1200V 100A GAR CH
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