Sign In | Join Free | My ccnmag.com
China Beijing Silk Road Enterprise Management Services Co.,LTD logo
Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
Verified Supplier

3 Years

Home > IGBT Transistors >

HGTD1N120BNS9A

Product Categories
Beijing Silk Road Enterprise Management Services Co.,LTD
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

HGTD1N120BNS9A

Gate-Emitter Leakage Current : +/- 250 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 5.3 A

Pd - Power Dissipation : 60 W

Collector- Emitter Voltage VCEO Max : 1200 V

Package / Case : TO-252AA-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Reel

Configuration : Single

Collector-Emitter Saturation Voltage : 2.5 V

Manufacturer : Fairchild Semiconductor

Contact Now

The HGTD1N120BNS9A,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
China HGTD1N120BNS9A wholesale

HGTD1N120BNS9A Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)