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Gate-Emitter Leakage Current : +/- 250 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 5.3 A
Pd - Power Dissipation : 60 W
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-252AA-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Reel
Configuration : Single
Collector-Emitter Saturation Voltage : 2.5 V
Manufacturer : Fairchild Semiconductor
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