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IRG4PH30KPBF

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IRG4PH30KPBF

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 20 A

Pd - Power Dissipation : 100 W

Collector- Emitter Voltage VCEO Max : 1.2 kV

Package / Case : TO-247-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 3.1 V

Manufacturer : IR / Infineon

Description : IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT

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The IRG4PH30KPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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