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FGY75N60SMD

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RF System on a Chip - SoC [613]
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Ambient Light, IR, UV Sensors [378]
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Phototransistors [542]
Reflective - Analog Output [310]
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Analog and Digital Output [2993]
Analog and Digital Output - Industrial [171]
RTD (Resistance Temperature Detector) [1016]
Thermocouples, Temperature Probes [1087]
Thermostats - Mechanical [883]
Thermostats - Mechanical - Industrial [789]
Thermostats - Solid State [1013]

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FGY75N60SMD

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 150 A

Pd - Power Dissipation : 750 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : Power-247

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 1.9 V

Manufacturer : Fairchild Semiconductor

Description : IGBT Transistors 600V, 75A Field Stop IGBT

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The FGY75N60SMD,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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