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Gate-Emitter Leakage Current : +/- 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Pd - Power Dissipation : 337 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-247-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 30 V
Configuration : Single
Continuous Collector Current at 25 C : 78 A
Manufacturer : Microsemi
Description : IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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