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IXGK400N30A3

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IXGK400N30A3

Gate-Emitter Leakage Current : 400 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 400 A

Pd - Power Dissipation : 1 kW

Collector- Emitter Voltage VCEO Max : 300 V

Package / Case : TO-264-3

Maximum Operating Temperature : + 150 C

Maximum Gate Emitter Voltage : +/- 20 V

Packaging : Tube

Configuration : Single

Collector-Emitter Saturation Voltage : 1.15 V

Manufacturer : IXYS

Description : IGBT Transistors 400 Amps 300V

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The IXGK400N30A3,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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