Sign In | Join Free | My ccnmag.com |
|
Gate-Emitter Leakage Current : 100 nA
Product Category : IGBT Transistors
Mounting Style : Through Hole
Continuous Collector Current at 25 C : 14 A
Pd - Power Dissipation : 56 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : TO-220
Packaging : Tube
Maximum Gate Emitter Voltage : 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Manufacturer : STMicroelectronics
Description : IGBT Transistors 600 V - 6 A Hyper fast IGBT
![]() |
STGPL6NC60DI Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.