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Transistor Polarity : N-Channel, P-Channel
Technology : Si
Id - Continuous Drain Current : 1.8 A
Mounting Style : SMD/SMT
Minimum Operating Temperature : - 55 C
Package / Case : SM-8
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : 60 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : 1 V
Product Category : MOSFET
Rds On - Drain-Source Resistance : 300 mOhms, 425 mOhms
Number of Channels : 4 Channel
Vgs - Gate-Source Voltage : 20 V
Qg - Gate Charge : 3.2 nC, 5.1 nC
Manufacturer : Diodes Incorporated
Description : MOSFET 60V UMOS H-Bridge
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