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SCT20N120

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SCT20N120

Transistor Polarity : N-Channel

Technology : SiC

Id - Continuous Drain Current : 20 A

Mounting Style : Through Hole

Minimum Operating Temperature : - 55 C

Package / Case : HiP247-3

Maximum Operating Temperature : + 200 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 1.2 kV

Packaging : Tube

Vgs th - Gate-Source Threshold Voltage : 2 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 215 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : - 10 V, + 25 V

Qg - Gate Charge : 45 nC

Manufacturer : STMicroelectronics

Description : MOSFET 1200V silicon carbide MOSFET

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The SCT20N120,from STMicroelectronics,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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