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MMST5551-7-F

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MMST5551-7-F

Transistor Polarity : NPN

Product Category : Bipolar Transistors - BJT

Mounting Style : SMD/SMT

Maximum DC Collector Current : 0.2 A

Collector- Emitter Voltage VCEO Max : 160 V

Package / Case : SOT-323-3

Maximum Operating Temperature : + 150 C

Gain Bandwidth Product fT : 300 MHz

Configuration : Single

Collector- Base Voltage VCBO : 180 V

Series : MMST55

Emitter- Base Voltage VEBO : 6 V

Manufacturer : Diodes Incorporated

Description : Bipolar Transistors - BJT NPN BIPOLAR

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The MMST5551-7-F,from Diodes Incorporated,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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