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HN1B01F-GR(TE85L,F

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HN1B01F-GR(TE85L,F

Transistor Polarity : PNP

Product Category : Bipolar Transistors - BJT

Mounting Style : SMD/SMT

Maximum DC Collector Current : 150 mA

Collector- Emitter Voltage VCEO Max : 50 V

Package / Case : SM-6

Maximum Operating Temperature : + 125 C

Gain Bandwidth Product fT : 80 MHz

Configuration : Dual

Collector- Base Voltage VCBO : 50 V

Series : HN1B01

Emitter- Base Voltage VEBO : 5 V

Collector-Emitter Saturation Voltage : 0.1 V

Manufacturer : Toshiba

Description : Bipolar Transistors - BJT Dual Trans PNP x 2 SM6, -50V, -0.15A

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The HN1B01F-GR(TE85L,F,from Toshiba,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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