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HBDM60V600W-7

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HBDM60V600W-7

Transistor Polarity : NPN, PNP

Product Category : Bipolar Transistors - BJT

Mounting Style : SMD/SMT

Maximum DC Collector Current : 0.5 A at NPN, 0.6 A at PNP

Collector- Emitter Voltage VCEO Max : - 60 V, + 65 V

Package / Case : SOT-363-6

Maximum Operating Temperature : + 150 C

Gain Bandwidth Product fT : 100 MHz

Configuration : Dual

Collector- Base Voltage VCBO : - 60 V, + 80 V

Series : HBDM60

Emitter- Base Voltage VEBO : - 5.5 V, 6 V

Collector-Emitter Saturation Voltage : - 0.5 V

Manufacturer : Diodes Incorporated

Description : Bipolar Transistors - BJT 200mW Half H-Bridge

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The HBDM60V600W-7,from Diodes Incorporated,is Bipolar Transistors - BJT.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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