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BFU710F,115

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BFU710F,115

Technology : SiGe

Product Category : RF Bipolar Transistors

Mounting Style : SMD/SMT

Transistor Type : Bipolar

Collector- Emitter Voltage VCEO Max : 2.8 V

Package / Case : SOT-343

DC Collector/Base Gain hfe Min : 200

Packaging : Reel

Manufacturer : NXP Semiconductors

Emitter- Base Voltage VEBO : 1 V

Continuous Collector Current : 10 mA

Description : RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

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The BFU710F,115,from NXP Semiconductors,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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