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Technology : Si
Product Category : RF Bipolar Transistors
Mounting Style : Through Hole
Transistor Type : Bipolar Power
Collector- Emitter Voltage VCEO Max : 75 V
Maximum Operating Temperature : + 200 C
DC Collector/Base Gain hfe Min : 25
Packaging : Tray
Manufacturer : ASI / Advanced Semiconductor, Inc.
Emitter- Base Voltage VEBO : 4 V
Continuous Collector Current : 15 A
Description : RF Bipolar Transistors RF Transistor
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