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2SC5551AF-TD-E

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2SC5551AF-TD-E

Transistor Polarity : NPN

Technology : Si

Product Category : RF Bipolar Transistors

Mounting Style : SMD/SMT

Transistor Type : Bipolar

Collector- Emitter Voltage VCEO Max : 30 V

Package / Case : PCP-3

Maximum Operating Temperature : + 150 C

DC Collector/Base Gain hfe Min : 90 at 50 mA at 5 V

Packaging : Reel

Configuration : Single

Manufacturer : onsemi

Emitter- Base Voltage VEBO : 2 V

Continuous Collector Current : 300 mA

Description : RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz

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The 2SC5551AF-TD-E,from onsemi,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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