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Transistor Polarity : N-Channel
Technology : GaAs
Product Category : RF JFET Transistors
Mounting Style : SMD/SMT
Gain : 16 dB
Transistor Type : pHEMT
Pd - Power Dissipation : 580 mW
Package / Case : SOT-343
Maximum Operating Temperature : + 160 C
Vds - Drain-Source Breakdown Voltage : 4.5 V
Packaging : Bulk
Id - Continuous Drain Current : 145 mA
Vgs - Gate-Source Breakdown Voltage : - 4 V
Manufacturer : Avago / Broadcom
Description : RF JFET Transistors Transistor GaAs Low Noise
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